Mitsubishi Electric Achieves World’s First Demonstration of Suppression of Frequency Dispersion in GaN Transistors Using GaN Substrates

Contributing to improved performance and lower power consumption of high-frequency equipment by demonstrating the inherent performance of GaN

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has, for the first time in the world, elucidated the effects of frequency dispersion caused by crystal defects in a gallium nitride (GaN) transistor, a high-frequency transistor fabricated by depositing a GaN epitaxial layer on a GaN substrate, and demonstrated that frequency dispersion can be significantly suppressed.

This achievement makes it possible to consistently realize the inherently high performance